82912 tkim/53006ea msim tb-00002379 no. a0410-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sc6094 bipolar transistor 60v, 3a, low v ce ( sat ) , npn single pcp applicaitons ? dc / dc converter, relay drivers, lamp drivers, motor drivers, inverter features ? adoption of fbet, mbit process ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? high allowable power dissipation speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 100 v collector-to-emitter voltage v ces 100 v v ceo 60 v emitter-to-base voltage v ebo 6.5 v collector current i c 3a collector current (pulse) i cp 5a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : ena0410a product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2SC6094-TD-E qe lot no. 2 3 1
2sc6094 no. a0410-2/7 continued from preceding page. parameter symbol conditions ratings unit base current i b 600 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =50v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe v ce =2v, i c =100ma 300 600 gain-bandwidth product f t v ce =10v, i c =500ma 390 mhz output capacitance cob v cb =10v, f=1mhz 18 pf collector-to-emitter saturation voltage v ce (sat)1 i c =1a, i b =50ma 90 135 mv v ce (sat)2 i c =1a, i b =100ma 80 120 mv base-to-emitter saturation voltage v be (sat) i c =1a, i b =100ma 0.84 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 100 v collector-to-emitter breakdown voltage v (br)ces i c =100 a, r be =0 100 v v (br)ceo i c =1ma, r be = 60 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6.5 v turn-on time t on see speci ed test circuit. 35 ns storage time t stg 680 ns fall time t f 24 ns switching time test circuit ordering information device package shipping memo 2SC6094-TD-E pcp 1,000pcs./reel pb free v r 10 r b v cc =30v i c =10i b1 = --10i b2 =0.5a v be = --5v ++ 50 input output r l 470 f 100 f pw=20 s i b1 d.c. 1% i b2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sc6094 no. a0410-3/7 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v 5.0 3.5 4.5 1.5 2.5 0.5 4.0 2.0 3.0 1.0 0 3.0 1.0 2.0 1.5 2.5 0.5 0 0.2 0 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 it11035 10ma i b =0ma 2ma ta=75 c 25 c --25 c v ce =2v 0 0.2 0.4 0.6 0.8 1.0 1.2 it11036 5ma 20ma 40ma 60ma 80ma 100ma it11041 3 2 7 5 10 5 7 it11039 ta=75 c --25 c it11040 i c / i b =10 25 c 3 1.0 3 ta= --25 c 25 c 75 c 2 7 5 i c / i b =10 it11042 ta=75 c 25 c --25 c 1000 7 100 5 3 2 5 7 0.01 3 25 0.1 7235 235 1.0 7 0.01 3 25 0.1 723 23 5 1.0 7 5 7 100 3 3 2 7 5 2 0.01 3 25 0.1 7235 235 1.0 7 0.1 3 25 1.0 7235 10 3 25 100 7 72 0.1 0.01 3 2 7 7 5 2 5 3 3 2 0.01 3 25 3 25 0.1 7235 1.0 7 v ce =2v it11037 it11038 v ce =10v f=1mhz ta=75 c -- 2 5 c i c / i b =20 25 c 0.01 3 25 0.1 7235 235 1.0 7 0.1 0.01 5 2 7 7 5 5 3 3 2 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a cob -- v cb v ce (sat) -- i c v be (sat) -- i c collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v h fe -- i c f t -- i c collector current, i c -- a dc current gain, h fe gain-bandwidth product, f t -- mhz collector current, i c -- a
2sc6094 no. a0410-4/7 0 1.4 1.3 1.0 0.6 1.2 0.8 0.4 0.2 20 060 40 80 100 140 120 160 it11044 0.01 2 0.1 7 5 3 2 2 1.0 7 5 3 10 7 5 3 0.1 0.01 2 2 5 3 7 1.0 2 5 3 7 10 2 5 3 7 100 5 3 7 i cp =5a 100ms 1ms i c =3a it11043 500 s < 10 s dc operation (ta=25 c) mounted on a ceramic board (250mm 2 ? 0.8mm) 10ms dc operation (tc=25 c) 100 s a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c tc=25 c single pulse mounted on a ceramic board (250mm 2 ? 0.8mm) collector dissipation, p c -- w p c -- tc case temperature, tc -- c 4.0 0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 20 060 40 80 100 140 120 160 it11045
2sc6094 no. a0410-5/7 embossed taping speci cation 2SC6094-TD-E
2sc6094 no. a0410-6/7 outline drawing land pattern example 2SC6094-TD-E mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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